The present study reports, synthesis and fabrication of SnS/n-Si (100) heterojunction solar cell by a cost-effective spray pyrolysis technique. XRD peaks resemble orthorhombic SnS. XRD and SEM study reveals crystal/grain size as 15 and 26.4 nm, respectively. The SnS surface is closely packed, and composition of Sn and S element weight% found to be 96.58 and 3.42, respectively, and hot probe method confirms intrinsic p-type conductivity due to excesses Tin in films. Raman spectral analysis confirms the SnS phase along with Sn₂S₃ and SnS₂. Isochronal and isothermal studies show that film sheet resistivity attains lowest value of 1.7248 × 10⁻² Ωcm when annealed at 200 °C for 15 min. From M-S contact studies, estimated reverse saturation current density, ideality factor, knee voltage, barrier potential, and disorder energy are found to be 3.0563 × 10⁻¹⁰ A cm⁻², 1.5225, 0.158 V, 0.7669 eV, and 0.0864 eV. Solar cell exhibits a typical rectifying diode behavior and its series resistance decreases from 41.44 to 16.66 kΩ as film thickness increases from 37 to 63 nm under illumination of 206 mW cm⁻².

本研究报告，合成和制造具有成本效益的喷雾热解技术的SnS / n-Si（100）异质结太阳能电池。XRD峰类似于斜方晶系的SnS。XRD和SEM研究表明晶体/晶粒尺寸分别为15和26.4 nm。SnS表面紧密堆积，Sn和S元素的重量百分比组成分别为96.58和3.42，并且热探针法证实了由于薄膜中锡过多导致的固有p型导电性。拉曼光谱分析证实了SnS相以及Sn ₂ S ₃和SnS ₂。等时和等温研究表明，薄膜电阻率达到最低值1.7248×10 ^-2 Ωcm在200°C退火15分钟时。从MS接触研究，估计反向饱和电流密度，理想因子，拐点电压，势垒，和无序能量被发现是3.0563×10 ^-10 甲厘米^-2，1.5225，0.158 V，0.7669伏特，和0.0864电子伏特。太阳能电池表现出典型的整流二极管性能，并且在206 mW cm ^-2的光照下，随着膜厚度从37 nm增加到63 nm，其串联电阻从41.44降低到16.66kΩ 。