Abstract
The present study reports, synthesis and fabrication of SnS/n-Si (100) heterojunction solar cell by a cost-effective spray pyrolysis technique. XRD peaks resemble orthorhombic SnS. XRD and SEM study reveals crystal/grain size as 15 and 26.4 nm, respectively. The SnS surface is closely packed, and composition of Sn and S element weight% found to be 96.58 and 3.42, respectively, and hot probe method confirms intrinsic p-type conductivity due to excesses Tin in films. Raman spectral analysis confirms the SnS phase along with Sn2S3 and SnS2. Isochronal and isothermal studies show that film sheet resistivity attains lowest value of 1.7248 × 10−2 Ωcm when annealed at 200 °C for 15 min. From M-S contact studies, estimated reverse saturation current density, ideality factor, knee voltage, barrier potential, and disorder energy are found to be 3.0563 × 10−10 A cm−2, 1.5225, 0.158 V, 0.7669 eV, and 0.0864 eV. Solar cell exhibits a typical rectifying diode behavior and its series resistance decreases from 41.44 to 16.66 kΩ as film thickness increases from 37 to 63 nm under illumination of 206 mW cm−2.
Highlights
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Fabrication of SnS/n-Si (100) heterojunction solar cell by cost-effective spray pyrolysis technique.
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XRD, SEM, EDS studies confirm the formation of orthorhombic, closely packed, stoichiometric films.
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Hot probe and Raman spectral analysis confirm the p-type and SnS phase along with Sn2S3 and SnS2.
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Isochronal and isothermal treatment further reduces film sheet resistivity.
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Cell exhibits a typical rectifying diode behavior, variable series resistance as a function of thickness.
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The authors acknowledge the support of JSSMVP, Mysuru and are thankful to INUP, CEN, IISc., Bangalore, India for extending central facility.
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Shashidhar, R., Choudhary, N. Cost-effective SnS heterojunction solar cells synthesized by spray pyrolysis. J Sol-Gel Sci Technol 96, 188–196 (2020). https://doi.org/10.1007/s10971-020-05397-7
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DOI: https://doi.org/10.1007/s10971-020-05397-7