Abstract

An approach is discussed to study the effect of self-heating on the current–voltage (I–V) characteristics of submicron field-effect transistors on a silicon-on-insulator (SOI) structure in ambient temperatures of 225 to 350°C. The approach consists of combining the experimental data and numerical simulation results. It is shown that with an increase in the ambient temperature the contribution of the self-heating mechanism gradually decreases. Different dynamics of the drop in current of the n- and p-transistors are noted, which is significant for analog applications and must be taken into account when designing high-temperature circuits. The proposed methodology makes it possible to critically evaluate the effect of self-heating on the I–V characteristics of transistors in a wide range of high temperatures and control voltages.

中文翻译：

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自热效应对高温下绝缘体上硅结构上场晶体管I-V特性的影响

摘要

的方法进行了讨论，研究自加热的上的电流-电压的影响（余- V）在225〜350℃的环境温度下的硅-绝缘体（SOI）结构的亚微米场效应晶体管的特性。该方法包括结合实验数据和数值模拟结果。结果表明，随着环境温度的升高，自热机制的贡献逐渐降低。n-和p电流下降的不同动态注意晶体管，这对于模拟应用很重要，在设计高温电路时必须考虑到这些因素。所提出的方法使得可以在很宽的高温和控制电压范围内严格评估自发热对晶体管的I – V特性的影响。