Influence of the Self-Heating Effect on the I–V Characteristics of Field Transistors on a Silicon-on-Insulator Structure at High Temperatures

Abstract

An approach is discussed to study the effect of self-heating on the current–voltage (I–V) characteristics of submicron field-effect transistors on a silicon-on-insulator (SOI) structure in ambient temperatures of 225 to 350°C. The approach consists of combining the experimental data and numerical simulation results. It is shown that with an increase in the ambient temperature the contribution of the self-heating mechanism gradually decreases. Different dynamics of the drop in current of the n- and p-transistors are noted, which is significant for analog applications and must be taken into account when designing high-temperature circuits. The proposed methodology makes it possible to critically evaluate the effect of self-heating on the I–V characteristics of transistors in a wide range of high temperatures and control voltages.