Abstract

We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in the wavelength range of 120–170 nm. It is shown that the avalanche photodiode has an external quantum yield of 24–150 electrons/photons at a reverse bias voltage of 230–345 V. Testing of this avalanche photodiode with pulsed illumination at wavelengths of 280 and 340 nm has shown performance corresponding to a transmission band no narrower than 25 MHz.

中文翻译：

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硅雪崩光电二极管在120–170 nm波长范围内的量子产率

摘要

我们设计了一种硅雪崩光电二极管，用于检测真空紫外线辐射。已经研究了硅雪崩光电二极管在120–170 nm波长范围内的外部量子产率。结果表明，雪崩光电二极管在230-345 V的反向偏置电压下具有24-150个电子/光子的外部量子产率。用脉冲照明在280和340 nm波长下对这种雪崩光电二极管进行测试，显示出与不小于25 MHz的传输频带。