Abstract
We have designed a silicon avalanche photodiode for detecting vacuum ultraviolet radiation. The external quantum yield of a silicon avalanche photodiode has been investigated in the wavelength range of 120–170 nm. It is shown that the avalanche photodiode has an external quantum yield of 24–150 electrons/photons at a reverse bias voltage of 230–345 V. Testing of this avalanche photodiode with pulsed illumination at wavelengths of 280 and 340 nm has shown performance corresponding to a transmission band no narrower than 25 MHz.
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ACKNOWLEDGMENTS
We are grateful to our colleagues N.V. Zabrodskaya, M.S. Lazeeva, M.V. Drozdova, and V.I. Marshalova from the Ioffe Physical Technical Institute for their help in preparing photodiodes and to M.E. Levinshtein for reading the manuscripts and valuable remarks.
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Translated by N. Wadhwa
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Aruev, P.N., Belik, V.P., Zabrodskii, V.V. et al. Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm. Tech. Phys. 65, 1333–1339 (2020). https://doi.org/10.1134/S1063784220080022
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DOI: https://doi.org/10.1134/S1063784220080022