Abstract

(Gd_{1 – x}Tb_x)₂O₃ (x = 0.04–0.22) films 115 to 150 nm in thickness have been grown on Si and SiO₂ substrates by metal organic chemical vapor deposition (MOCVD) using Ln(dpm)₃ precursors. After annealing in air at 800°C for removing carbon-containing impurities, the films were sulfided in NH₄SCN vapor at temperatures from 700 to 1000°C in an Ar atmosphere until the formation of (Gd_{1 – x}Tb_x)₂O₂S oxysulfides. The surface of the films is formed by grains 60 to 200 nm in size. The measured refractive index of the films is 2.2–2.4 and their estimated optical band gap (E_g) is 4.7–5.0 eV. The optical transmission of the films in the visible spectral region (400–750 nm) reaches 78–84%. The highest photoluminescence (PL) intensity in the oxysulfide films produced under identical conditions has been observed at x = 0.05. The blue component of their PL decreases with increasing terbium content and the emission shifts to the green spectral region.

中文翻译：

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在NH 4 SCN蒸气中氧化物硫化制备（Gd 1-x Tb x）2 O 2 S固溶膜及其光学性质。

摘要

（Gd _{1 – x} Tb _x）₂ O ₃（x = 0.04–0.22）膜厚度为115至150 nm，使用Ln（dpm）₃前体通过金属有机化学气相沉积（MOCVD）在Si和SiO ₂衬底上生长。在800°C的空气中退火以除去含碳杂质后，将膜在NH ₄ SCN蒸气中于700至1000°C的温度下于Ar气氛中硫化，直到形成（Gd _{1 – x} Tb _x）₂ O ₂ 硫氧化物。膜的表面由尺寸为60至200nm的晶粒形成。薄膜的测得折射率为2.2–2.4，估计的光学带隙（E _g）为4.7–5.0 eV。薄膜在可见光谱范围（400-750 nm）内的透光率达到78-84％。在相同条件下制备的氧硫化物膜中的最高光致发光（PL）强度在x = 0.05时已观察到。它们的PL的蓝色成分随ter含量的增加而降低，并且发射移向绿色光谱区域。