In this paper, gradual and symmetrical long-term potentiation (LTP) and long-term depression (LTD) were achieved by applying the optimal electrical pulse condition of the interfacial phase-change memory (iPCM) based on a superlattice (SL) structure fabricated by stacking GeTe/Sb₂Te₃ alternately to implement an artificial synapse in neuromorphic computing. Furthermore, conventional phase-change random access memory (PCRAM) based on a Ge–Sb–Te (GST) alloy with an identical bottom electrode contact size was fabricated to compare the electrical characteristics. The results showed a reduction in the reset energy consumption of the GeTe/Sb₂Te₃ (GT/ST) iPCM by more than 69% of the GST alloy for each bottom electrode contact size. Additionally, the GT/ST iPCM achieved gradual conductance tuning and 90.6% symmetry between LTP and LTD with a relatively unsophisticated pulse scheme. Based on the above results, GT/ST iPCM is anticipated to be exploitable as a synaptic device used for brain-inspired computing and to be utilized for next-generation non-volatile memory.

中文翻译：

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基于界面相变记忆的逐步电导特性在人工突触中的实现

本文通过基于制造的超晶格（SL）结构应用界面相变存储器（iPCM）的最佳电脉冲条件，实现了渐进和对称的长期增强（LTP）和长期抑制（LTD）通过交替堆叠GeTe / Sb ₂ Te ₃在神经形态计算中实现人工突触。此外，制造了基于具有相同底部电极接触尺寸的Ge–Sb–Te（GST）合金的传统相变随机存取存储器（PCRAM），以比较电特性。结果表明，GeTe / Sb ₂ Te ₃的复位能耗降低了（GT / ST）iPCM占每种底部电极触点尺寸的GST合金的69％以上。此外，GT / ST iPCM使用相对简单的脉冲方案实现了渐进的电导调整，并在LTP和LTD之间实现了90.6％的对称性。基于以上结果，预计GT / ST iPCM可作为一种用于大脑启发式计算的突触设备，并可用于下一代非易失性存储器。