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Influence of Hydrogen on the Structure of Cerium Films Obtained by Magnetron Sputter Deposition on Semiconductor Wafers
Inorganic Materials: Applied Research ( IF 0.5 ) Pub Date : 2020-08-07 , DOI: 10.1134/s2075113320040425
V. N. Verbetskii , S. V. Mitrokhin , G. A. Badun , S. A. Evlashin , A. A. Tepanov , V. A. Bunyaev

Abstract

The influence of hydrogen on the structure of thin cerium films formed by the method of magnetron sputter deposition was investigated in this work. Hydrogen-charging of the films was carried out by the method of Langmuir hydrogen dissociation on a tungsten substrate. The cerium hydride films were coated with a protective layer of nickel or chromium. It is demonstrated in this work that the used method of hydrogen charging can be used for introduction of hydrogen also into other hydride-forming metals and alloys.


中文翻译:

氢对半导体晶片上磁控溅射沉积铈膜结构的影响

摘要

本文研究了氢对通过磁控溅射沉积法形成的铈薄膜结构的影响。通过朗缪尔(Langmuir)氢离解法在钨衬底上对膜进行氢充电。氢化铈膜涂有镍或铬的保护层。在这项工作中证明,所使用的氢填充方法也可以用于将氢引入其他形成氢化物的金属和合金中。
更新日期:2020-08-07
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