Solar cell utilizes a small portion of solar spectrum leaving higher energy (> band gap, E_g) as thermalization loss and lower energy (< band gap, E_g) as absorption loss. Wavelength-sensitive engineered absorbing layer such as nanometric absorber holds huge potential in this context. Here in this work, a simple and hands-on strategy was devised to grow silicon nanowires (Si-NWs) on silicon wafer. Nanoparticles were achieved in the first step and used as seeds to directed growth of Si-NWs. As-grown Si-NWs with coverage ca. 6.5 × 10⁸/cm² were characterized through scanning electron microscope. To realize such Si-NWs as nanometric absorber in nanowire solar cell, a three-dimensional finite-difference time-domain simulation has been carried out. Considering the possibility of Si-NWs of different diameters as observed in experimental investigations, Si-NW of 50-, 100-, and 150-nm diameters was chosen in simulation. Two specific wavelengths, 700 and 1100 nm, were in prime focus to understand the characteristics of exciton generation within Si-NW. Confinement in exciton generation rate distribution at 700-nm solar spectrum for Si-NW of 150 nm was found to be most effective, whereas at 1100-nm wavelength Si-NW of 100 nm showed higher exciton generation rate distribution with the nanowire. Exciton generation line profiles along the center and edge were extracted, and comparative analysis was carried out for different diameters of Si-NW at 700- and 1100-nm wavelengths. Such experimental and correlated simulation is indispensable not only to reduce costs but also to understand and improve the cell efficiency using the light-trapping technique.

太阳能电池利用一小部分太阳光谱，留下较高的能量（>带隙，E _g）作为热损失，而较低的能量（<带隙，E _g）作为吸收损失。在这种情况下，波长敏感的工程吸收层（例如纳米吸收体）具有巨大的潜力。在这项工作中，设计了一种简单而动手的策略来在硅晶片上生长硅纳米线（Si-NW）。在第一步中获得了纳米粒子，并将其用作Si-NWs定向生长的种子。成长的Si-NW，覆盖率约 6.5×10 ⁸ /厘米²通过扫描电子显微镜表征。为了实现诸如纳米线太阳能电池中的纳米吸收剂之类的Si-NW，已经进行了三维有限差分时域仿真。考虑到实验研究中观察到的不同直径的Si-NW的可能性，在仿真中选择了50、100和150 nm直径的Si-NW。我们主要关注700和1100 nm这两个特定波长，以了解Si-NW中激子产生的特性。发现对于150nm的Si-NW，在700nm太阳光谱处的激子产生速率分布的限制是最有效的，而在1100nm波长下，100nm的Si-NW对纳米线显示出​​更高的激子产生速率分布。提取沿中心和边缘的激子生成线轮廓，并在700和1100 nm波长下对不同直径的Si-NW进行了比较分析。这样的实验和相关模拟不仅是降低成本，而且是理解和提高使用光阱技术的电池效率所不可缺少的。