Abstract

We report on the results of first practical observations of sputtering of the Si surface during the implantation with Ag⁺ ions with an energy of 30 keV depending on irradiation dose D in the interval from 2.5 × 10¹⁶ to 1.5 × 10¹⁷ ion/cm² for a fixed value of ion beam current density J = 8 μA/cm², as well as for variation of J = 2, 5, 8, 15, and 20 μA/cm² at constant D = 1.5 × 10¹⁷ ion/cm². In the former case, the thickness of the porous Si (PSi) layer being sputtered increases monotonically to 50 nm at the maximum value of D; in this case, the effective sputtering ratio of the implanted Ag : PSi layer is 1.6. We have also established that the thickness of the sputtered layer increases with current density J.

中文翻译：

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低能量大剂量银离子注入过程中硅表面的溅射

摘要

我们报告了在以2.5到10 ¹⁶到1.5到10 ¹⁷离子/ cm ²的间隔内，取决于辐照剂量D的能量为30 keV的Ag ⁺离子注入过程中Si表面溅射的首次实际观察结果。对于固定值的离子束电流密度J = 8μA/ cm ²，以及在常数D = 1.5×10 ¹⁷ ion / cm时J = 2、5、8、15和20μA/ cm ²的变化²。在前一种情况下，被溅射的多孔Si（PSi）层的厚度在的最大值下单调增加至50 nm。D ; 在这种情况下，注入的Ag∶PSi层的有效溅射比为1.6。我们还确定，溅射层的厚度随电流密度J的增加而增加。