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Sputtering of Silicon Surface during Low-Energy High-Dose Implantation with Silver Ions

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Abstract

We report on the results of first practical observations of sputtering of the Si surface during the implantation with Ag+ ions with an energy of 30 keV depending on irradiation dose D in the interval from 2.5 × 1016 to 1.5 × 1017 ion/cm2 for a fixed value of ion beam current density J = 8 μA/cm2, as well as for variation of J = 2, 5, 8, 15, and 20 μA/cm2 at constant D = 1.5 × 1017 ion/cm2. In the former case, the thickness of the porous Si (PSi) layer being sputtered increases monotonically to 50 nm at the maximum value of D; in this case, the effective sputtering ratio of the implanted Ag : PSi layer is 1.6. We have also established that the thickness of the sputtered layer increases with current density J.

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ACKNOWLEDGMENTS

Ion implantation was performed at the Kazan Zavoisky Physical Technical Institute, which is a separate structural branch of the Federal Research Center KazNTs of the Russian Academy of Sciences. Morphological analysis of test samples was carried out on the equipment of the Analytic Spectroscopy Interdisciplinary Center of the Kazan Federal University.

Funding

This study was supported by the Russian Science Foundation, project no. 17-12-01176.

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Authors and Affiliations

  1. Interdisciplinary Center Analytic Microscopy, Kazan Federal University, 420008, Kazan, Russia

    V. V. Vorob’ev & A. M. Rogov

  2. Kazan Zavoisky Physical Technical Institute, Federal Scientific Center KazNTs, Russian Academy of Sciences, 420029, Kazan, Russia

    V. V. Vorob’ev, A. M. Rogov, V. I. Nuzhdin, V. F. Valeev & A. L. Stepanov

Authors
  1. V. V. Vorob’ev
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  2. A. M. Rogov
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  3. V. I. Nuzhdin
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  4. V. F. Valeev
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  5. A. L. Stepanov
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Corresponding author

Correspondence to V. V. Vorob’ev.

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The authors declare that they have no conflicts of interest.

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Translated by N. Wadhwa

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Vorob’ev, V.V., Rogov, A.M., Nuzhdin, V.I. et al. Sputtering of Silicon Surface during Low-Energy High-Dose Implantation with Silver Ions. Tech. Phys. 65, 1156–1162 (2020). https://doi.org/10.1134/S1063784220070269

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  • DOI: https://doi.org/10.1134/S1063784220070269

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