ZrCoCe getter films with thickness of ~ 2.3 μm were deposited on Si(100) wafers by direct current (DC) magnetron sputtering process. A 400-nm-thick Pd protection layer was then deposited on the as-deposited ZrCoCe film without exposure to atmosphere. Microstructure, surface morphology and surface chemical state of the films were analyzed. Moreover, hydrogen sorption properties were determined. The results show that the ZrCoCe film displays a cauliflower-like morphology and a porous columnar-like structure which is composed of nanocrystal grains. The Pd protection layer tightly adheres to the surface of the ZrCoCe film and efficiently prevents the oxidation of Zr under exposure to atmosphere. We find that the hydrogen sorption properties of the Pd-ZrCoCe film are significantly improved, in comparison with those of the as-deposited ZrCoCe film.

中文翻译：

---

带Pd保护层的ZrCoCe吸气膜的结构与性能

通过直流 (DC) 磁控溅射工艺在 Si(100) 晶片上沉积约 2.3 μm 厚度的 ZrCoCe 吸气剂薄膜。然后将 400 nm 厚的 Pd 保护层沉积在沉积的 ZrCoCe 膜上，而不暴露在大气中。分析了薄膜的微观结构、表面形貌和表面化学状态。此外，还测定了吸氢性能。结果表明，ZrCoCe薄膜呈现菜花状形态和由纳米晶粒组成的多孔柱状结构。Pd保护层紧密粘附在ZrCoCe薄膜表面，有效防止Zr暴露在大气中氧化。我们发现，与沉积的 ZrCoCe 薄膜相比，Pd-ZrCoCe 薄膜的吸氢性能显着提高。