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Native high- k oxides for 2D transistors
Nature Electronics ( IF 34.3 ) Pub Date : 2020-08-05 , DOI: 10.1038/s41928-020-0464-2
Yury Yu. Illarionov , Theresia Knobloch , Tibor Grasser

The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

中文翻译:

用于2D晶体管的原生高k氧化物

二维半导体Bi2O2Se可以被氧化以形成Bi2SeO5的原子薄层,可以用作按比例缩放的场效应晶体管的绝缘体。
更新日期:2020-08-05
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