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TWO-DIMENSIONAL MATERIALS

Native high-k oxides for 2D transistors

The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

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Fig. 1: Development of FETs with Bi2O2Se channels and native Bi2SeO5 insulators.

References

  1. International Roadmap for Devices and Systems, 2020 Edition (IEEE, 2020); https://irds.ieee.org/editions/2020/

  2. Waldrop, M. M. Nature 530, 144–147 (2016).

    Article  Google Scholar 

  3. Fiori, G. et al. Nat. Nanotechnol. 9, 768–779 (2014).

    Article  Google Scholar 

  4. Li, M.-Y. et al. Nature 567, 169–170 (2019).

    Article  Google Scholar 

  5. Li, T. et al. Nat. Electron. https://doi.org/10.1038/s41928-020-0444-6 (2020).

  6. Hui, F. et al. Microelectron. Eng. 163, 119–133 (2016).

    Article  Google Scholar 

  7. Illarionov, Y. Y. et al. Nat. Electron. 2, 230–235 (2019).

    Article  Google Scholar 

  8. Li, W. et al. Nat. Electron. 2, 563–571 (2019).

    Article  Google Scholar 

  9. Fleetwood, D. M. IEEE Trans. Nucl. Sci. 39, 269–271 (1992).

    Article  Google Scholar 

Download references

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Correspondence to Yury Yu. Illarionov or Tibor Grasser.

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Illarionov, Y.Y., Knobloch, T. & Grasser, T. Native high-k oxides for 2D transistors. Nat Electron 3, 442–443 (2020). https://doi.org/10.1038/s41928-020-0464-2

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