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Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime
Semiconductors ( IF 0.6 ) Pub Date : 2020-08-05 , DOI: 10.1134/s1063782620080035
A. N. Akimov , I. O. Akhundov , D. V. Ishchenko , A. E. Klimov , I. G. Neizvestny , N. S. Paschin , S. P. Suprun , A. S. Tarasov , O. E. Tereshchenko , E. V. Fedosenko , V. N. Sherstyakova

Abstract

The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.



中文翻译:

PbSnTe中的符号交替光电导:在空间电荷受限的电流体制中的薄膜中

摘要

研究了PbSnTe:In薄膜在空间电荷受限电流状态下光电导符号对偏压,强度和照明持续时间的依赖性。讨论了具有复杂能谱的陷阱(包括表面陷阱)在观察效应中的作用。

更新日期:2020-08-05
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