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Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
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Abstract

The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 20-02-00324, and by the Russian Science Foundation, grant no. 17-12-01047.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    A. N. Akimov, I. O. Akhundov, D. V. Ishchenko, A. E. Klimov, I. G. Neizvestny, N. S. Paschin, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, E. V. Fedosenko & V. N. Sherstyakova

  2. Novosibirsk State Technical University, 630073, Novosibirsk, Russia

    A. E. Klimov & I. G. Neizvestny

  3. Novosibirsk State University, 630090, Novosibirsk, Russia

    O. E. Tereshchenko

Authors
  1. A. N. Akimov
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  2. I. O. Akhundov
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  3. D. V. Ishchenko
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  4. A. E. Klimov
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  5. I. G. Neizvestny
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  6. N. S. Paschin
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  7. S. P. Suprun
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  8. A. S. Tarasov
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  9. O. E. Tereshchenko
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  10. E. V. Fedosenko
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  11. V. N. Sherstyakova
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Corresponding author

Correspondence to O. E. Tereshchenko.

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The authors declare that they have no conflict of interest.

Additional information

Translated by V. Bukhanov

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Akimov, A.N., Akhundov, I.O., Ishchenko, D.V. et al. Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime. Semiconductors 54, 951–955 (2020). https://doi.org/10.1134/S1063782620080035

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  • DOI: https://doi.org/10.1134/S1063782620080035

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