Abstract

We present a study of Shubnikov–de Haas (SdH) oscillations at temperatures of (2.2–10) K in magnetic fields up to 2.5 T in the HgCdTe/HgTe/HgCdTe heterostructure for a wide (20.3 nm) HgTe quantum well with an inverted energy band structure. The analysis of the temperature dependence of SdH amplitude in weak fields, in a region of doubly degenerate magnetoresistance peaks, led us to the value of effective electron mass m_c/m₀ = (0.022 ± 0.002) which is about half the theoretical estimates. But in a region of higher magnetic fields, for nondegenerate magnetoresistance peaks, we confidently have m_c/m₀ = (0.034 ± 0.003) in good agreement both with the theoretical estimation and with our experimental results on the analysis of activation transport under quantum Hall effect regime. The reasons for this discrepancy are discussed.

中文翻译：

---

二维HgTeΓ8带电子的有效质量和g因子：Shubnikov-de Haas振荡

摘要

我们对宽（20.3 nm）的HgTe量子阱中HgCdTe / HgTe / HgCdTe异质结构中高达2.5 T的磁场中（2.2–10）K的温度下（2.2-10）K的Shubnikov-De Haas（SdH）振荡进行了研究能带结构。在双简并磁阻峰的区域中，对弱磁场中SdH振幅的温度依赖性的分析使我们得出有效电子质量m _c / m ₀ =（0.022±0.002）的值，约为理论估计值的一半。但是在磁场较高的区域中，对于非简并的磁阻峰，我们可以放心地将m _c / m ₀=（0.034±0.003）与理论估计和我们的量子霍尔效应条件下的活化输运分析的实验结果吻合良好。讨论了这种差异的原因。