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Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
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Abstract

We present a study of Shubnikov–de Haas (SdH) oscillations at temperatures of (2.2–10) K in magnetic fields up to 2.5 T in the HgCdTe/HgTe/HgCdTe heterostructure for a wide (20.3 nm) HgTe quantum well with an inverted energy band structure. The analysis of the temperature dependence of SdH amplitude in weak fields, in a region of doubly degenerate magnetoresistance peaks, led us to the value of effective electron mass mc/m0 = (0.022 ± 0.002) which is about half the theoretical estimates. But in a region of higher magnetic fields, for nondegenerate magnetoresistance peaks, we confidently have mc/m0 = (0.034 ± 0.003) in good agreement both with the theoretical estimation and with our experimental results on the analysis of activation transport under quantum Hall effect regime. The reasons for this discrepancy are discussed.

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ACKNOWLEDGMENTS

Experiments were carried out at the Collaborative Access Center “Testing Center of Nanotechnology and Advanced Materials” of the M.N. Miheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences.

Funding

The research was carried out within the state assignment of Russian Ministry of Science and High education, theme “Electron” and “Function”, supported in part by Russian Foundation on Basic Research, projects Nos. 18-02-00172 (samples), 18-32-00382 (experiment).

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Authors and Affiliations

  1. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990, Ekaterinburg, Russia

    V. N. Neverov, A. S. Bogolubskii, S. V. Gudina, S. M. Podgornykh, K. V. Turutkin, M. R. Popov, N. G. Shelushinina & M. V. Yakunin

  2. Ural Federal University, 620002, Ekaterinburg, Russia

    S. M. Podgornykh & M. V. Yakunin

  3. Rzhanov Institute of Semiconductor Physics of Siberian Branch of Russian Academy of Sciences, 630090, Novosibirsk, Russia

    N. N. Mikhailov & S. A. Dvoretsky

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  1. V. N. Neverov
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  2. A. S. Bogolubskii
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  3. S. V. Gudina
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  5. K. V. Turutkin
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  6. M. R. Popov
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  7. N. G. Shelushinina
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  8. M. V. Yakunin
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  9. N. N. Mikhailov
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  10. S. A. Dvoretsky
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Correspondence to V. N. Neverov.

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Neverov, V.N., Bogolubskii, A.S., Gudina, S.V. et al. Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations. Semiconductors 54, 982–990 (2020). https://doi.org/10.1134/S1063782620080163

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  • DOI: https://doi.org/10.1134/S1063782620080163

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