In this work, pure and Bi-doped (0.01, 0.02 and 0.03) M Cu₂Se thin films were deposited on glass substrate by simple chemical bath deposition method. The effect of Bi doping on Cu₂Se films was analysed using their structural, morphological, optical and electrical properties recorded by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), diffuse reflectance spectra (DRS) and Hall effect analysis respectively. The XRD pattern shows cubic structure for pure and Bi-doped Cu₂Se films, and peak shift confirms the incorporation of Bi into Cu₂Se lattice. FESEM images show uniform homogenous particles distributed over their surface. Bi-doped films show higher optical absorption, and the band gap value is about 1.73–1.65 eV. The electrical property of the films shows high electrical conductivity. The Photo I–V measurement exhibited good photovoltaic behaviour.

在这项工作中，通过简单的化学浴沉积方法在玻璃基板上沉积了纯Bi掺杂（0.01、0.02和0.03）的M Cu ₂ Se薄膜。使用X射线衍射（XRD），场发射扫描电子显微镜（FESEM），漫反射光谱（DRS）和霍尔效应记录的Bi掺杂对Cu ₂ Se薄膜的结构，形态，光学和电学性质的影响进行了分析。分别进行分析。X射线衍射图谱显示纯的和Bi掺杂的Cu ₂ Se薄膜的立方结构，峰位移证实Bi掺入Cu _2中硒晶格。FESEM图像显示均匀均匀的颗粒分布在其表面上。双掺杂膜显示更高的光吸收，并且带隙值约为1.73–1.65 eV。膜的电性能显示出高电导率。光电I-V测量显示出良好的光伏性能。