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Enhanced Photosensitivity of Bi-Doped Cu2Se Thin Films Prepared by Chemical Synthesis for Solar Cell Application

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Abstract

In this work, pure and Bi-doped (0.01, 0.02 and 0.03) M Cu2Se thin films were deposited on glass substrate by simple chemical bath deposition method. The effect of Bi doping on Cu2Se films was analysed using their structural, morphological, optical and electrical properties recorded by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), diffuse reflectance spectra (DRS) and Hall effect analysis respectively. The XRD pattern shows cubic structure for pure and Bi-doped Cu2Se films, and peak shift confirms the incorporation of Bi into Cu2Se lattice. FESEM images show uniform homogenous particles distributed over their surface. Bi-doped films show higher optical absorption, and the band gap value is about 1.73–1.65 eV. The electrical property of the films shows high electrical conductivity. The Photo I–V measurement exhibited good photovoltaic behaviour.

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Acknowledgements

The author Mr. J. Henry acknowledges his sincere thanks to the University Grants Commission (UGC), New Delhi, India, for providing financial support through Basic Scientific Research (BSR) (award letter no. F.25-1/2013-14 (BSR)/7- 305/2010(BSR)) fellowship. The author Dr. K. Mohanraj acknowledges for DST-SERB-EMR for providing analytical facilities to his research laboratory. The authors are thankful to the DST-FIST, UGC-SAP and RUSA-MHRD, New Delhi, for providing the financial support to the Department of Physics, Manonmaniam Sundaranar University.

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Correspondence to K. Mohanraj.

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Henry, J., Daniel, T., Balasubramanian, V. et al. Enhanced Photosensitivity of Bi-Doped Cu2Se Thin Films Prepared by Chemical Synthesis for Solar Cell Application. Iran J Sci Technol Trans Sci 44, 1369–1377 (2020). https://doi.org/10.1007/s40995-020-00949-6

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  • DOI: https://doi.org/10.1007/s40995-020-00949-6

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