This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (R_S) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p⁺-Si)/indium devices. A gold/PMMA:BP/p⁺-Si/indium device exhibits R_S behavior, but a gold/PMMA/p⁺-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p⁺-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the R_S performance for gold/PMMA:BP/p⁺-Si/indium devices.

本研究确定在电阻开关并入黑磷（BP）纳米片为聚（甲基丙烯酸甲酯）（PMMA）（的效果- [R_小号使用金/ PMMA的依赖于温度的电流-电压特性）的机制：BP /重掺杂p Si（p ⁺ -Si）/铟器件。金/ PMMA：BP / p ⁺ -Si /铟器件表现出R _S行为，而金/ PMMA / p ⁺ -Si /铟器件表现出置位/复位-自由电流-电压特性。金/ PMMA：BP / p ⁺ -Si /铟器件中的电流受到欧姆传导，空间电荷或填充陷阱的限制。将BP掺入PMMA会导致PMMA：BP膜的陷阱密度显着增加，这会增加金/ PMMA：BP / p ⁺ -Si /铟器件的R _S性能。