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Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate)

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Abstract

This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p+-Si)/indium devices. A gold/PMMA:BP/p+-Si/indium device exhibits RS behavior, but a gold/PMMA/p+-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p+-Si/indium devices is limited by ohmic conduction, the space charge or filled trap. Incorporating BP into PMMA results in a significant increase in the trap density for a PMMA:BP film, which increases the RS performance for gold/PMMA:BP/p+-Si/indium devices.

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Acknowledgements

The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 106-2112-M-018-001-MY3) in the form of grants.

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Authors and Affiliations

  1. Institute of Photonics, National Changhua University of Education, Changhua, 500, Taiwan

    Ting-Hong Su & Yow-Jon Lin

  2. Department of Physics, National Changhua University of Education, Changhua, 500, Taiwan

    Ming-Yang Chen & Wei-Shiuan Huang

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  1. Ting-Hong Su
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  2. Ming-Yang Chen
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  3. Wei-Shiuan Huang
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  4. Yow-Jon Lin
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Correspondence to Yow-Jon Lin.

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Su, TH., Chen, MY., Huang, WS. et al. Temperature-dependent resistive switching for gold/poly(methyl methacrylate)/heavily doped p-type Si/indium devices by incorporating black phosphorus into poly(methyl methacrylate). Indian J Phys 95, 1351–1356 (2021). https://doi.org/10.1007/s12648-020-01818-z

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  • DOI: https://doi.org/10.1007/s12648-020-01818-z

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