Abstract

The parameters of high-voltage LDMOS transistors on a silicon structure on an insulator formed in a technological cycle combined with the manufacturing technology of low-voltage CMOS LSI are investigated. LDMOS transistors are studied under conditions of the temperature changing in the range –60 to 300°C and exposure to ionizing radiation.

中文翻译：

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SOI结构上的高压LDMOS晶体管，用于极端条件下运行的电子

摘要

结合低压CMOS LSI的制造技术，研究了以工艺周期形成的绝缘体上硅结构上的高压LDMOS晶体管的参数。在温度变化范围为–60至300°C且暴露于电离辐射的条件下研究了LDMOS晶体管。