Abstract
The parameters of high-voltage LDMOS transistors on a silicon structure on an insulator formed in a technological cycle combined with the manufacturing technology of low-voltage CMOS LSI are investigated. LDMOS transistors are studied under conditions of the temperature changing in the range –60 to 300°C and exposure to ionizing radiation.
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Babkin, S.I., Volkov, S.I., Glushko, A.A. et al. High-Voltage LDMOS Transistors on an SOI Structure for Electronics That Operate in Extreme Conditions. Russ Microelectron 49, 285–294 (2020). https://doi.org/10.1134/S1063739720030026
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DOI: https://doi.org/10.1134/S1063739720030026