Quantum efficiency of CMOS compatible multi-diode lateral Si p–i–n photodetector is calculated using two-dimensional transport in the form of carrier diffusion from substrate along the vertical direction and drift along the horizontal (lateral) direction. The model verified with experimental data from literature are used to compute and plot the quantum efficiency as a function of device parameters, such as number of diodes, trench depth, finger spacing, etc. Results show that the device parameters can be suitably chosen to improve the quantum efficiency. Possible optimum designs with respect to some parameters are also indicated for maximum quantum efficiency and maximum bandwidth-quantum efficiency product.

中文翻译：

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器件参数对提高横向Si p–i–n光电探测器的量子效率的影响

CMOS兼容的多二极管横向Si p–i–n光电探测器的量子效率是使用二维传输来计算的，其形式是载流子从基板沿垂直方向扩散，然后沿水平（横向）方向漂移。与来自文献的实验数据验证了模型被用来计算并绘制量子效率的设备参数，诸如二极管的数量，沟槽深度，手指间距等的功能结果表明，设备参数可以适当地选择，以改善量子效率。还针对最大量子效率和最大带宽-量子效率乘积指出了关于某些参数的可能的最佳设计。