Abstract
Quantum efficiency of CMOS compatible multi-diode lateral Si p–i–n photodetector is calculated using two-dimensional transport in the form of carrier diffusion from substrate along the vertical direction and drift along the horizontal (lateral) direction. The model verified with experimental data from literature are used to compute and plot the quantum efficiency as a function of device parameters, such as number of diodes, trench depth, finger spacing, etc. Results show that the device parameters can be suitably chosen to improve the quantum efficiency. Possible optimum designs with respect to some parameters are also indicated for maximum quantum efficiency and maximum bandwidth-quantum efficiency product.
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Acknowledgements
The authors would like to thank the colleagues in their research group in the Institute of Radio Physics and Electronics, University of Calcutta, for their help and comments. This work was partially supported by the UGC non-NET Research Fellowship, Government of India in the University of Calcutta.
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Rakshit, P., Das, N.R. Effect of device parameters on improving the quantum efficiency of a lateral Si p–i–n photodetector. Opt Quant Electron 52, 371 (2020). https://doi.org/10.1007/s11082-020-02490-7
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DOI: https://doi.org/10.1007/s11082-020-02490-7