Using the variational method within the effective-mass approximation, the effects of geometrical shape and impurity position on the ground-state self-polarization and binding energy of a donor impurity are theoretically studied for the infinite GaAs/AlAs tetragonal quantum dot. We have found that the ground-state self-polarization and binding energy depend on geometrical shape and impurity-AlAs layer distance.

中文翻译：

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几何形状和杂质位置对无限GaAs / AlAs四方量子点中施主杂质的自极化的影响

利用有效质量近似中的变分方法，从理论上研究了无限大的GaAs / AlAs四方量子点的几何形状和杂质位置对基态自极化和施主杂质结合能的影响。我们已经发现，基态的自极化和结合能取决于几何形状和杂质-AlAs层的距离。