Carbon ion implantation was conducted on an AM60 magnesium alloy with fluences between 1 × 10¹⁶ and 6 × 10¹⁶ ions/cm² and an energy of 35 keV. The microstructure and electrochemical properties of the samples were systematically characterized by X-ray photoelectron spectroscopy, X-ray diffraction, Raman scattering, scanning electron microscopy, transmission electron microscopy, and electrochemical methods. These studies reveal that a 250 nm-thick C-rich layer is formed on the surface and the Mg₂C₃ phase embeds in the ion-implanted region. The crystal structure of the Mg₂C₃ was constructed, and an electronic density map was calculated by density-functional theory calculation. The large peak in the density of states (DOS) shows two atomic p orbitals for Mg₂C₃. The main electron energy is concentrated between −50 and −40 eV, and the electron energy mainly comes from Mg (p) and Mg (s). The electrochemical experiments reveal that the E_corr is −1.35 V and I_corr is 20.1 μA/cm² for the sample implanted with the optimal fluence of 6 × 10¹⁶ ions/cm². The sample from C ion implantation gives rise to better corrosion resistance.

中文翻译：

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碳离子注入镁合金的腐蚀行为及其机理

碳离子注入是在AM60镁合金上进行的，注量在1×10 ¹⁶和6×10 ¹⁶离子/ cm ^2之间，能量为35 keV。通过X射线光电子能谱，X射线衍射，拉曼散射，扫描电子显微镜，透射电子显微镜和电化学方法系统地表征了样品的微观结构和电化学性能。这些研究表明，在表面上形成了250 nm厚的富C层，并且Mg ₂ C ₃相嵌入了离子注入区。Mg ₂ C ₃的晶体结构构造，并通过密度泛函理论计算来计算电子密度图。状态密度（DOS）的大峰值显示Mg ₂ C _3的两个原子p轨道。主电子能量集中在-50至-40 eV之间，并且电子能量主要来自Mg（p）和Mg（s）。电化学实验表明，该Ë_更正件是-1.35 V和我_更正件是20.1μA/厘米²与6×10的最优积分通量注入的样品^16个离子/ cm ²。C离子注入的样品具有更好的耐腐蚀性。