The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

中文翻译：

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铝箔/ p型4H-SiC肖特基势垒二极管扩散焊接的势垒不均匀性和电子传输研究

扩散焊接（DW）是一种综合机制，可广泛用于开发碳化硅（SiC）肖特基整流器，作为现有主流接触成形技术的廉价替代品。在这项工作中，肖特基势垒二极管（SBD）是通过采用新技术在p型4H-SiC衬底上沉积铝箔而制成的；DW。研究了物理制造的铝箔/ 4H-SiC SBD的电性能。基于温度范围（300 K–450 K）的热电子发射模型研究了电流-电压（IV）和电容-电压（CV）特性。已经发现，相同制造的铝箔/ p的理想因子和势垒高度型4H-SiC SBD在电气特性上显示出明显的偏差。随着温度的升高，已经注意到Al箔/ p型4H-SiC SBD的理想因子的提高。随着温度的升高，还可以观察到制造的SBD中势垒高度的增加。我们还发现，这些势垒高度的增加，其理想特性的改善和电气特性的异常是由于结构缺陷的产生，离散能级的形成，界面天然氧化物层的形成，不均匀的掺杂分布和SiC表面的隧道电流的形成。