Bandgap enlarged Mg-doped aluminum zinc oxide (Mg-doped AZO) film is a potential transparent conducting oxide for applications in photonics devices. The oxide film normally deposited by sputtering, particularly using ceramic targets, while maintaining its pristine property for the film deposited using metallic targets is rarely addressed. This study investigated the optical and electrical properties of Mg-doped AZO films that were performed by a magnetron reactive co-sputtering method using metallic Mg and Al–Zn targets. Doping of Mg in the AZO significantly affects the electrical resistivity and optical transmission of the films because Mg tends to replace part of Zn lattice sites. The 1.2 at.% Mg-doped AZO film had an electrical resistivity of 7.9 × 10⁻⁴ Ω·cm, an optical transmittance of 92.6% in the visible light range, and a bandgap of 3.66 eV when the film was post-annealed at 600 °C. The Mg doping widens the bandgap and, thus, increases the transmittance of the AZO film. Because of the superior electrical and optical characteristics, the Mg-doped AZO films prepared using the metallic targets can be a reliable transparent conducting oxide for applications.

中文翻译：

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金属镁和铝锌靶通过反应溅射沉积镁掺杂的铝锌氧化物薄膜的定制能隙和电性能

带隙扩大的掺Mg的铝锌氧化物（掺Mg的AZO）膜是潜在的透明导电氧化物，适用于光子学设备。通常很少解决通常通过溅射，特别是使用陶瓷靶通过溅射沉积的氧化物膜同时保持其对于使用金属靶沉积的膜的原始性质的问题。这项研究调查了使用金属Mg和Al-Zn靶材通过磁控反应共溅射方法执行的Mg掺杂AZO薄膜的光学和电学性质。镁在AZO中的掺杂会显着影响薄膜的电阻率和光学透射率，因为镁倾向于取代部分Zn晶格位。掺杂有1.2 at。％的Mg的AZO膜的电阻率为7.9×10 ^-4Ω·cm，在可见光范围内的透光率为92.6％，在600°C下进行薄膜后退火时的带隙为3.66 eV。镁的掺杂使能带隙变宽，因此增加了AZO膜的透射率。由于其优异的电学和光学特性，使用金属靶材制备的掺Mg的AZO膜可以成为可靠的透明导电氧化物。