Abstract

The electroluminescence spectra and the dependences of the open circuit voltage on the photogenerated current are studied for GaAs solar cells the p–n junction of which contained various numbers of rows (r) of quantum objects based on In_0.4Ga_0.6As layers. For all samples, the saturation current (J₀), the band gap of the quantum object (\(E_{g}^{Q}\)), and the open circuit voltage drop (ΔV_oc) relative to the reference (r = 0) sample are obtained. A model adequately describing the dependences J₀(r) and ΔV_oc(r) is proposed, and the model parameters are found, including the current invariant J_z = 1.4 × 10⁵ A/cm², which uniquely relates the saturation current to the band gap of the quantum object.

中文翻译：

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GaInAs量子物体的行数对GaAs光电转换器饱和电流的影响

摘要

研究了GaAs太阳能电池的电致发光光谱以及开路电压对光生电流的依赖性，该GaAs太阳能电池的p - n结包含基于In _0.4 Ga _0.6 As层的各种数量的行（r）。对于所有样本，饱和电流（J ₀），量子物体的带隙（\（E_ {g} ^ {Q} \））以及相对于参考电压（ΔV _oc）的开路电压降（ΔV _oc）r = 0）获得样品。充分描述依赖关系J ₀（r）和ΔV的模型提出了_oc（r），并找到了模型参数，包括电流不变J _z = 1.4×10 ⁵ A / cm ²，其将饱和电流与量子物体的带隙唯一相关。