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The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters

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Abstract

The electroluminescence spectra and the dependences of the open circuit voltage on the photogenerated current are studied for GaAs solar cells the p–n junction of which contained various numbers of rows (r) of quantum objects based on In0.4Ga0.6As layers. For all samples, the saturation current (J0), the band gap of the quantum object (\(E_{g}^{Q}\)), and the open circuit voltage drop (ΔVoc) relative to the reference (r = 0) sample are obtained. A model adequately describing the dependences J0(r) and ΔVoc(r) is proposed, and the model parameters are found, including the current invariant Jz = 1.4 × 105 A/cm2, which uniquely relates the saturation current to the band gap of the quantum object.

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ACKNOWLEDGMENTS

The authors are grateful to M.V. Nakhimovich for measuring the electroluminescence spectra and the dependences of the open circuit voltage on the photogenerated current.

Funding

This work was supported by the Russian Science Foundation, agreement no. 17-72-20146.

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Authors and Affiliations

  1. Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    M. A. Mintairov, A. M. Nadtochii & R. A. Salii

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    V. V. Evstropov, S. A. Mintairov, M. Z. Shvarts & N. A. Kalyuzhnyi

Authors
  1. M. A. Mintairov
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  2. V. V. Evstropov
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  3. S. A. Mintairov
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  4. A. M. Nadtochii
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  5. R. A. Salii
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  6. M. Z. Shvarts
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  7. N. A. Kalyuzhnyi
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Correspondence to M. A. Mintairov.

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Translated by E. Chernokozhin

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Mintairov, M.A., Evstropov, V.V., Mintairov, S.A. et al. The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters. Tech. Phys. Lett. 46, 599–602 (2020). https://doi.org/10.1134/S106378502006022X

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  • DOI: https://doi.org/10.1134/S106378502006022X

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