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Plasma Parameters and Kinetics of Active Particles in the Mixture CHF 3 + O 2 + Ar
Russian Microelectronics Pub Date : 2020-07-16 , DOI: 10.1134/s1063739720030038
A. M. Efremov , D. B. Murin , K.-H. Kwon

Abstract

The effect of the O2/Ar component ratio in the CHF3 + O2 + Ar mixture on the electrical parameters of the plasma, kinetics of active particles, and their stationary concentrations under the high-frequency (13.56 MHz) induction discharge is investigated. Using jointly the plasma diagnostics and simulation techniques, (i) features of the plasma composition in the oxygen-free system CHF3 + Ar are found, (ii) the effect of oxygen on the stationary concentrations of active particles is established via the kinetics of processes under the electron impact and the reaction of the atom–molecule interaction, and (iii) a simulation analysis of the kinetics of heterogeneous processes (etching, polymerization, and destruction of a polymer film), which determine the etching mode and output characteristics, is carried out.


中文翻译:

CHF 3 + O 2 + Ar混合物中活性粒子的等离子体参数和动力学

摘要

研究了CHF 3 + O 2 + Ar混合物中O 2 / Ar组分比对等离子体电学参数,活性粒子动力学及其在高频(13.56 MHz)感应放电下的固定浓度的影响。联合使用等离子体诊断和模拟技术,(i)无氧系统CHF 3中等离子体组成的特征 发现了+ Ar,(ii)氧对活性颗粒固定浓度的影响是通过电子撞击下的过程动力学和原子-分子相互作用的反应建立的,以及(iii)动力学的模拟分析进行确定蚀刻模式和输出特性的异质工艺(蚀刻,聚合和破坏聚合物膜)。
更新日期:2020-07-16
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