The Cu₂SnS₃ (CTS) thin films were produced by deposition of Sn/Cu layers by RF sputtering followed by annealing in an Ar/S atmosphere with S and Sn sources. According to XRD analysis and Raman spectroscopy, it was shown that single-phase CTS films of a monoclinic structure with traces of the Cu_xS phase were formed at a temperature of 520°C. Scanning electron microscopy revealed a compact and homogeneous microstructure of the polycrystalline CTS layers. Photoluminescence spectra of the СTS films of monoclinic modification show one wide peak in the energy range of 0.7–1.0 eV, due to optical transitions of electrons from the conduction band to deep energy levels of acceptor-type defects.

中文翻译：

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Cu 2 SnS 3薄膜的相组成，微观结构和光学性质

Cu ₂ SnS ₃（CTS）薄膜是通过RF溅射沉积Sn / Cu层，然后在Ar / S气氛中使用S和Sn源进行退火而制成的。根据XRD分析和拉曼光谱法，表明在520℃的温度下形成了具有痕量Cu _x S相的单斜晶结构的单相CTS膜。扫描电子显微镜显示多晶CTS层的致密且均匀的微观结构。单斜修饰的СTS薄膜的光致发光光谱在0.7-1.0 eV的能量范围内显示一个宽峰，这是由于电子从导带到受体类型缺陷的深能级的光学跃迁。