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Broadband near-infrared emission of La3Ga5GeO14:Tb3+,Cr3+ phosphors: energy transfer, persistent luminescence and application in NIR light-emitting diodes
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-07-14 , DOI: 10.1039/d0tc02498h Biao Bai 1, 2, 3, 4, 5 , Peipei Dang 3, 4, 5, 6, 7 , Zhongli Zhu 1, 2, 3, 4 , Hongzhou Lian 3, 4, 5, 6, 7 , Jun Lin 3, 4, 5, 6, 7
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-07-14 , DOI: 10.1039/d0tc02498h Biao Bai 1, 2, 3, 4, 5 , Peipei Dang 3, 4, 5, 6, 7 , Zhongli Zhu 1, 2, 3, 4 , Hongzhou Lian 3, 4, 5, 6, 7 , Jun Lin 3, 4, 5, 6, 7
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A La3Ga5GeO14:Tb3+,Cr3+ near-infrared phosphor with high efficiency was prepared by a high-temperature solid-state method. The synthesized samples were analyzed by X-ray diffraction (XRD), diffuse reflectance spectroscopy, photoluminescence spectroscopy (PL&PLE), fluorescence decay curves and temperature dependent photoluminescence spectroscopy. Due to the highly efficient energy transfer from Tb3+ to Cr3+ ions, at an excitation wavelength of 373 nm, all La3Ga5GeO14:Tb3+,Cr3+ samples show strong emission bands in the range of 400–1300 nm, and the optimal doping concentration is under the conditions of x = 2.5 mol% and y = 1.4 mol%. In addition, the La2.975Ga4.986GeO14:0.025Tb3+,0.014Cr3+ phosphor showed excellent thermal stability, and the emission intensity at 423 K maintained 62% of the original value at 298 K. NIR pc-LED devices were prepared by combining a La2.975Ga4.986GeO14:0.025Tb3+,0.014Cr3+ phosphor with a 460 nm blue light emitting chip. Photoluminescence with a total output power of 3.018 mW could be achieved at a driving current of 160 mA, indicating the potential application in night vision lighting.
中文翻译：
La3Ga5GeO14：Tb3 +，Cr3 +荧光粉的宽带近红外发射：能量转移，持续发光及其在近红外发光二极管中的应用
通过高温固态法制备了高效率的La 3 Ga 5 GeO 14：Tb 3+，Cr 3+近红外荧光粉。通过X射线衍射（XRD），漫反射光谱，光致发光光谱（PL＆PLE），荧光衰减曲线和温度依赖性光致发光光谱分析合成的样品。由于从Tb 3+到Cr 3+离子的高效能量转移，在373 nm的激发波长下，所有La 3 Ga 5 GeO 14：Tb 3+，Cr 3+样品显示出在400-1300 nm范围内的强发射带，最佳掺杂浓度在x = 2.5 mol％和y = 1.4 mol％的条件下。此外，La 2.975 Ga 4.986 GeO 14：0.025Tb 3+，0.014Cr 3+荧光粉显示出极好的热稳定性，并且在423 K时的发射强度保持在298 K时的原始值的62％。通过组合La 2.975 Ga 4.986 GeO 14：0.025Tb 3+，0.014Cr 3+制备带有460 nm蓝色发光芯片的荧光粉。在160 mA的驱动电流下可以实现3.018 mW的总输出功率的光致发光，这表明其在夜视照明中的潜在应用。
更新日期：2020-09-03
中文翻译：
La3Ga5GeO14：Tb3 +，Cr3 +荧光粉的宽带近红外发射：能量转移，持续发光及其在近红外发光二极管中的应用
通过高温固态法制备了高效率的La 3 Ga 5 GeO 14：Tb 3+，Cr 3+近红外荧光粉。通过X射线衍射（XRD），漫反射光谱，光致发光光谱（PL＆PLE），荧光衰减曲线和温度依赖性光致发光光谱分析合成的样品。由于从Tb 3+到Cr 3+离子的高效能量转移，在373 nm的激发波长下，所有La 3 Ga 5 GeO 14：Tb 3+，Cr 3+样品显示出在400-1300 nm范围内的强发射带，最佳掺杂浓度在x = 2.5 mol％和y = 1.4 mol％的条件下。此外，La 2.975 Ga 4.986 GeO 14：0.025Tb 3+，0.014Cr 3+荧光粉显示出极好的热稳定性，并且在423 K时的发射强度保持在298 K时的原始值的62％。通过组合La 2.975 Ga 4.986 GeO 14：0.025Tb 3+，0.014Cr 3+制备带有460 nm蓝色发光芯片的荧光粉。在160 mA的驱动电流下可以实现3.018 mW的总输出功率的光致发光，这表明其在夜视照明中的潜在应用。
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