Issue 34, 2020

Broadband near-infrared emission of La3Ga5GeO14:Tb3+,Cr3+ phosphors: energy transfer, persistent luminescence and application in NIR light-emitting diodes

Abstract

A La3Ga5GeO14:Tb3+,Cr3+ near-infrared phosphor with high efficiency was prepared by a high-temperature solid-state method. The synthesized samples were analyzed by X-ray diffraction (XRD), diffuse reflectance spectroscopy, photoluminescence spectroscopy (PL&PLE), fluorescence decay curves and temperature dependent photoluminescence spectroscopy. Due to the highly efficient energy transfer from Tb3+ to Cr3+ ions, at an excitation wavelength of 373 nm, all La3Ga5GeO14:Tb3+,Cr3+ samples show strong emission bands in the range of 400–1300 nm, and the optimal doping concentration is under the conditions of x = 2.5 mol% and y = 1.4 mol%. In addition, the La2.975Ga4.986GeO14:0.025Tb3+,0.014Cr3+ phosphor showed excellent thermal stability, and the emission intensity at 423 K maintained 62% of the original value at 298 K. NIR pc-LED devices were prepared by combining a La2.975Ga4.986GeO14:0.025Tb3+,0.014Cr3+ phosphor with a 460 nm blue light emitting chip. Photoluminescence with a total output power of 3.018 mW could be achieved at a driving current of 160 mA, indicating the potential application in night vision lighting.

Graphical abstract: Broadband near-infrared emission of La3Ga5GeO14:Tb3+,Cr3+ phosphors: energy transfer, persistent luminescence and application in NIR light-emitting diodes

Supplementary files

Article information

Article type
Paper
Submitted
25 May 2020
Accepted
11 Jul 2020
First published
14 Jul 2020

J. Mater. Chem. C, 2020,8, 11760-11770

Broadband near-infrared emission of La3Ga5GeO14:Tb3+,Cr3+ phosphors: energy transfer, persistent luminescence and application in NIR light-emitting diodes

B. Bai, P. Dang, Z. Zhu, H. Lian and J. Lin, J. Mater. Chem. C, 2020, 8, 11760 DOI: 10.1039/D0TC02498H

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