Monolayers of atomically thin semiconductors show novel excitonic physics with tunable optical and electronic properties. Excitons along with its charged complexes have significant role in future optoelectronic devices with respect to carrier transport and recombination. Monolayer of MoSe₂ and WSe₂ have been investigated for their charge transport and photo response at room and cryogenic temperatures in order to optimize the device for enhanced sensitivity and detectivity. Low temperature PL measurements depicts the decoupling of phonons from excitons due to reduction of non-radiative channels. At cryogenic temperature the maximum photo response of the WSe₂ and MoSe₂ based detector is 7.2 AW⁻¹ and 5.0 AW⁻¹, respectively, whereas the maximum attainable detectivity as observed for device fabricated from WSe₂ and MoSe₂ is 2.0 × 10¹¹ Jones and 3.5 × 10⁸ Jones, respectively. This indicates that phonon decoupling and scattering needs to be optimized for better device performance.

原子薄半导体的单分子层具有新颖的激子物理学，具有可调节的光学和电子特性。激子及其带电配合物在载流子传输和复合方面在未来的光电器件中具有重要作用。已经研究了MoSe ₂和WSe _2的单层在室温和低温下的电荷传输和光响应，以优化器件以提高灵敏度和检测能力。低温PL测量描述了由于非辐射通道的减少，声子与激子的去耦。在低温下，基于WSe ₂和MoSe ₂的检测器的最大光响应为7.2 AW ^-1和5.0 AW^-1，而用WSe ₂和MoSe ₂制成的器件观察到的最大可达到的检测率_分别为2.0×10 ¹¹ Jones和3.5×10 ⁸ Jones。这表明声子去耦和散射需要优化，以提高器件性能。