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Photonic and optoelectronic properties of layered semiconductors

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Abstract

Monolayers of atomically thin semiconductors show novel excitonic physics with tunable optical and electronic properties. Excitons along with its charged complexes have significant role in future optoelectronic devices with respect to carrier transport and recombination. Monolayer of MoSe2 and WSe2 have been investigated for their charge transport and photo response at room and cryogenic temperatures in order to optimize the device for enhanced sensitivity and detectivity. Low temperature PL measurements depicts the decoupling of phonons from excitons due to reduction of non-radiative channels. At cryogenic temperature the maximum photo response of the WSe2 and MoSe2 based detector is 7.2 AW−1 and 5.0 AW−1, respectively, whereas the maximum attainable detectivity as observed for device fabricated from WSe2 and MoSe2 is 2.0 × 1011 Jones and 3.5 × 108 Jones, respectively. This indicates that phonon decoupling and scattering needs to be optimized for better device performance.

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Acknowledgements

This work is mainly supported by Alexander von Humboldt (AvH) foundation research grant under George Forster fellowship.

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Authors and Affiliations

  1. Faculty of Physics and Materials Sciences Centre, Philipps-Universität Marburg, 35032, Marburg, Germany

    Arslan Usman

  2. Department of Physics, COMSATS University Islamabad - Lahore Campus, Lahore, Pakistan

    Arslan Usman & Abdul Sattar

  3. Department of Physics, Forman Christian College University, Lahore, Pakistan

    Hamid Latif

  4. Department of Physics, University of Sahiwal, Sahiwal, Pakistan

    Muhammad Rafique

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  1. Arslan Usman
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  2. Abdul Sattar
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  3. Hamid Latif
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Correspondence to Arslan Usman.

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Usman, A., Sattar, A., Latif, H. et al. Photonic and optoelectronic properties of layered semiconductors. Appl Nanosci 10, 3933–3938 (2020). https://doi.org/10.1007/s13204-020-01508-6

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