Abstract

We measure the reflectance spectra of 1.8 µm-thick FP9120 photoresist films doped with antimony ions and deposited by centrifugation on the surface of p-type silicon wafers (ρ = 10 Ω cm) with a (111) orientation. Implantation leads to a decrease in the refractive index of the photoresist due to the radiation crosslinking of Novolac resin molecules and a decrease in the molecular refraction and density of the photoresist. In the opacity region of the photoresist film, an increase in the reflection coefficient is observed with an increase in the implantation dose.

中文翻译：

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掺锑离子的重氮醌-酚醛清漆光刻胶膜反射光谱的辐射激发转变

摘要

我们测量了掺杂有锑离子并通过离心沉积在具有（111）取向的p型硅晶片（ρ= 10Ωcm）的表面上的厚1.8 µm FP9120光刻胶膜的反射光谱。由于酚醛清漆树脂分子的辐射交联，注入导致光致抗蚀剂的折射率降低，以及光致抗蚀剂的分子折射率和密度降低。在光致抗蚀剂膜的不透明区域中，随着注入剂量的增加，观察到反射系数的增加。