We report epitaxial growth of vanadium diselenide (VSe${}_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe${}_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe${}_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.

中文翻译：

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GaAs（111）B上范德华1T-VSe2层的分子束外延相干生长和表征

我们报道了二硒化钒（VSe）的外延生长${}_2$）通过分子束外延在GaAs（111）B衬底上以八面体坐标（1T）结构形成薄膜。展示了单层（ML）到30 ML的膜厚。通过X射线衍射，透射电子显微镜，扫描隧道显微镜和X射线光电子能谱进行的结构和化学研究表明，高质量的薄膜。进一步的研究表明单层VSe${}_2$GaAs上的薄膜不是空气稳定的，并且在数小时之内易于氧化，这表明在器件应用中应使用保护性覆盖层。这项工作证明了VSe${}_2$可以通过可能的自旋电子学和电子应用的范德华候选材料，通过外延生长与III-V半导体集成，用于2D / 3D混合器件。