Coherent growth and characterization of van der Waals $1\mathrm{T}\text{\ensuremath{-}}{\mathrm{VSe}}_{2}$ layers on GaAs(111)B using molecular beam epitaxy

Coherent growth and characterization of van der Waals $1 T − {VSe}_{2}$ layers on GaAs(111)B using molecular beam epitaxy

Tiancong Zhu, Dante J. O’Hara, Brenton A. Noesges, Menglin Zhu, Jacob J. Repicky, Mark R. Brenner, Leonard J. Brillson, Jinwoo Hwang, Jay A. Gupta, and Roland K. Kawakami

Phys. Rev. Materials 4, 084002 – Published 17 August 2020

Abstract

We report epitaxial growth of vanadium diselenide ( ${VSe}_{2}$ ) thin films in the octahedrally coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy, and x-ray photoelectron spectroscopy indicate high-quality thin films. Further studies show that monolayer ${VSe}_{2}$ films on GaAs are not air stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that ${VSe}_{2}$ , a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for two- and three-dimensional hybrid devices.

Received 7 April 2020
Accepted 26 June 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.084002

Physics Subject Headings (PhySH)

Chemical bonding Growth

Ferromagnets III-V semiconductors Transition metal dichalcogenides

Molecular beam epitaxy Reflection high-energy electron diffraction

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Tiancong Zhu^1,*, Dante J. O’Hara ^2,3,†, Brenton A. Noesges¹, Menglin Zhu⁴, Jacob J. Repicky¹, Mark R. Brenner^5,6, Leonard J. Brillson ^1,5, Jinwoo Hwang⁴, Jay A. Gupta ¹, and Roland K. Kawakami^1,2,‡

¹Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
²Program in Materials Science and Engineering, University of California, Riverside, California 92521, USA
³Materials Science Division, Lawrence Livermore National Laboratory, Livermore, California 94550, USA
⁴Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA
⁵Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
⁶Semiconductor and Epitaxy Analysis Laboratory, The Ohio State University, Columbus, Ohio 43210, USA

^*Present address: University of California, 94720 Berkeley, CA, USA.
^†Present address: Naval Research Laboratory, Washington, DC 20375, USA.
^‡Corresponding author: Department of Physics, The Ohio State University, 191 W. Woodruff Ave., Columbus, OH 43210, USA; kawakami.15@osu.edu

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Vol. 4, Iss. 8 — August 2020

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Coherent growth and characterization of van der Waals 1T−VSe2 layers on GaAs(111)B using molecular beam epitaxy

Tiancong Zhu, Dante J. O’Hara, Brenton A. Noesges, Menglin Zhu, Jacob J. Repicky, Mark R. Brenner, Leonard J. Brillson, Jinwoo Hwang, Jay A. Gupta, and Roland K. Kawakami

Phys. Rev. Materials 4, 084002 – Published 17 August 2020

Abstract

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Coherent growth and characterization of van der Waals $1 T − {VSe}_{2}$ layers on GaAs(111)B using molecular beam epitaxy