A simplified analytical approach within the framework of Landauer-Buttiker formalism has been employed to model the drain current in a ballistic n-channel metal oxide semiconductor field effect transistor (MOSFET) and the expression for the device threshold voltage has been obtained. To achieve ballistic operation the said MOSFET has been modeled considering low temperature (77 K) and intrinsic silicon channel for electronic motion of the charge carriers. The model incorporates quantum confinement effect, drain induced barrier lowering (DIBL) and short channel effects (SCE). Further, the effects due to surface scattering and back scattering are included in this model to obtain a near ballistic behavior. The current-voltage characteristics are compared with the available experimental results and are found to be in reasonable agreement.

在Landauer-Buttiker形式主义框架内的简化分析方法已被用来对弹道n沟道金属氧化物半导体场效应晶体管（MOSFET）中的漏极电流建模，并获得了器件阈值电压的表达式。为了实现弹道操作，已经考虑低温（77 K）和用于载流子电子运动的固有硅沟道对所述MOSFET进行了建模。该模型包含了量子约束效应，漏极诱导势垒降低（DIBL）和短沟道效应（SCE）。此外，由于表面散射和反向散射而产生的影响也包含在该模型中，以获得近似的弹道行为。将电流-电压特性与可用的实验结果进行了比较，发现它们之间存在合理的一致性。