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Analytical Model for Drain Current of a Ballistic MOSFET

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Abstract

A simplified analytical approach within the framework of Landauer-Buttiker formalism has been employed to model the drain current in a ballistic n-channel metal oxide semiconductor field effect transistor (MOSFET) and the expression for the device threshold voltage has been obtained. To achieve ballistic operation the said MOSFET has been modeled considering low temperature (77 K) and intrinsic silicon channel for electronic motion of the charge carriers. The model incorporates quantum confinement effect, drain induced barrier lowering (DIBL) and short channel effects (SCE). Further, the effects due to surface scattering and back scattering are included in this model to obtain a near ballistic behavior. The current-voltage characteristics are compared with the available experimental results and are found to be in reasonable agreement.

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Acknowledgments

Authors would like to thank Prof. P. N. Ram, Department of Chemical Engineering, M. J. P. Rohilkhand University, Bareilly, India for his interest in the work. We acknowledge the facility and support provided by the Department of Electronics and Communication Engineering, Thapar Institute of Engineering and Technology, Patiala, India and the Department of Electronic Science, Kurukshetra University, Kurukshetra, India.

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Authors and Affiliations

  1. Electronics and Communication Engineering Department, Thapar Institute of Engineering and Technology, (formerly known as Thapar University), Patiala, Punjab, India

    Arun Kumar Chatterjee & Madhu Kushwaha

  2. Department of Electronic Science, Kurukshetra University, Kurukshetra, Haryana, India

    B. Prasad

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  1. Arun Kumar Chatterjee
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  2. Madhu Kushwaha
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  3. B. Prasad
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Correspondence to Arun Kumar Chatterjee.

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Chatterjee, A.K., Kushwaha, M. & Prasad, B. Analytical Model for Drain Current of a Ballistic MOSFET. Silicon 13, 1777–1785 (2021). https://doi.org/10.1007/s12633-020-00574-3

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