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Pressure Sensor Based on Quantum Well-structured Photonic Crystal
Silicon ( IF 2.8 ) Pub Date : 2020-07-03 , DOI: 10.1007/s12633-020-00552-9
Bhuvneshwer Suthar , Anami Bhargava

In the present communication, the strain sensitive quantum well-structured photonic crystal has been utilized to realize a pressure sensor device. The quantum well-structure in one dimensional photonic crystal opens a channel into the photonic bandgap. The channel can be tuned with the refractive index of material, which depends on parameter, i.e. pressure. This tunability of the channel with the applied pressure is used in high pressure sensor application. The proposed sensor can work in the range between 0 and 6 GPa corresponding to wavelength range 1509–1550 nm. The proposed sensor has a high quality factor, sensitivity and figure of merit (FOM) as ~ 105, 6.74 nm/GPa, 872.43 /GPa, respectively.



中文翻译:

基于量子结构良好的光子晶体的压力传感器

在本通信中,应变敏感的量子结构良好的光子晶体已被用于实现压力传感器装置。一维光子晶体中的量子阱结构打开了进入光子带隙的通道。可以根据材料的折射率来调整通道,该折射率取决于参数,即压力。通道与所施加压力的这种可调性用于高压传感器应用中。建议的传感器可以在0到6 GPa的范围内工作,对应于1509-1550 nm的波长范围。所提出的传感器具有高的品质因数,敏感性和品质因数(FOM)为〜10 5,6.74纳米/ GPA,872.43 / GPA,分别。

更新日期:2020-07-05
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