Abstract
In the present communication, the strain sensitive quantum well-structured photonic crystal has been utilized to realize a pressure sensor device. The quantum well-structure in one dimensional photonic crystal opens a channel into the photonic bandgap. The channel can be tuned with the refractive index of material, which depends on parameter, i.e. pressure. This tunability of the channel with the applied pressure is used in high pressure sensor application. The proposed sensor can work in the range between 0 and 6 GPa corresponding to wavelength range 1509–1550 nm. The proposed sensor has a high quality factor, sensitivity and figure of merit (FOM) as ~ 105, 6.74 nm/GPa, 872.43 /GPa, respectively.
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10 October 2020
A Correction to this paper has been published: https://doi.org/10.1007/s12633-020-00753-2
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Suthar, B., Bhargava, A. Pressure Sensor Based on Quantum Well-structured Photonic Crystal. Silicon 13, 1765–1768 (2021). https://doi.org/10.1007/s12633-020-00552-9
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DOI: https://doi.org/10.1007/s12633-020-00552-9