Solar cells based on Cu(In,Ga)Se₂ alloys as the absorber layer continue to attract attention in research and industry. In order to reduce production costs, several deposition techniques have been employed, one of which is the electrochemical way. The paper reports on the synthesis in a single bath of low cost electrochemically thin films of the ternary semiconductor compound CuInSe₂ without the need to post-annealing treatments. We have studied the optimal parameters required for the electrodeposition of thin films on both molybdenum-coated glass (Mo) and silicon wafer substrates (Si). Metals salts of CuCl₂, InCl₃ and SeCl₄ without added complexing agent were used to prepare close to stoichiometric composition of the chalcopyrite compound CuInSe₂. Thin films were electrodeposited at two imposed potentials − 0.4 and − 1 V/SCE. In addition to the electrochemical characterization methods, we have characterized our films using the X-ray diffraction technique (XRD), scanning electron microscope (SEM) and atomic force microscopy (AFM). The results indicate that the best films in terms of elemental composition, structure, crystallite size and morphology have been obtained with the imposed potential of − 1 V/SCE.

基于Cu（In，Ga）Se ₂合金作为吸收层的太阳能电池在研究和工业中继续受到关注。为了降低生产成本，已经采用了几种沉积技术，其中一种是电化学方法。该论文报道了在单浴中合成低成本半导体三元化合物CuInSe _2的电化学薄膜，而无需进行后退火处理。我们研究了在钼涂层玻璃（Mo）和硅晶片基板（Si）上电沉积薄膜所需的最佳参数。CuCl的金属盐_{如图2所示}，使用不添加络合剂的InCl ₃和SeCl ₄来制备接近化学计量组成的黄铜矿化合物CuInSe ₂。薄膜在两个施加的电位-0.4和-1 V / SCE下进行电沉积。除了电化学表征方法外，我们还使用X射线衍射技术（XRD），扫描电子显微镜（SEM）和原子力显微镜（AFM）对我们的薄膜进行了表征。结果表明，在元素组成，结构，微晶尺寸和形态方面均获得了最佳薄膜，施加的电势为-1 V / SCE。