Molybdenum disulfide (MoS₂) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS₂ field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS₂ FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS₂, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS₂-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.

二硫化钼（MoS ₂）作为原子薄的二维（2D）半导体具有广阔的前景，可用于未来的电子产品和光电子学。在本报告中，我们研究了在接触界面处具有石墨烯插入层的MoS ₂场效应晶体管（FET）的磁阻（MR）。由于独特的器件结构和高质量的接触界面，在2 K时可观察到高达67％的栅极可调线性MR。通过与具有常规金属接触的石墨烯FET和MoS ₂ FET的MR进行比较，发现这种异常的MR最有可能源自石墨烯和MoS ₂之间的接触界面，可以用载流子迁移率的空间波动引起的经典线性MR模型来解释。我们的研究表明，通过异质结设计，基于MoS ₂的系统中的大型MR响应，为未来的磁电子学和范德华力异质结构发光。