Abstract

Silicon carbonitride (SiC_xN_y) films have useful properties and thereby wide potential for practical use. Methods for the preparation of bulk and film SiC_xN_y-based materials are intensively developing. Here, we consider the preparation of such films by chemical vapor deposition (CVD) using organosilicon compounds as precursors. Additional components of the input gases are NH₃ and N₂ as reagents and an inert gas (He or Ar). The principles of thermodynamic calculations of the CVD process occurring under quasi-equilibrium conditions are analyzed. A generalized CVD diagram for the Si–C–N–H–He(Ar) system having excessive carbon has been designed in the area of deposition parameters where p = 0.01–10 Torr, T = 600–1400 K, and n(N)/n(Si) = 1–10. This diagram will be useful in experimental studies of the Si–C–N–H–He(Ar) system.

中文翻译：

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Si–C–N–H–Не（Ar）系统的广义CVD图

摘要

碳氮化硅（SiC _x N _y）膜具有有用的性能，因此具有广泛的实用价值。制备块状和薄膜SiC _x N _y基材料的方法正在大力发展。在这里，我们考虑使用有机硅化合物作为前体通过化学气相沉积（CVD）制备此类薄膜。输入气体的其他成分是作为试剂的NH ₃和N ₂和惰性气体（He或Ar）。分析了在准平衡条件下发生的CVD过程的热力学计算原理。已在沉积参数区域设计了具有过量碳的Si–C–N–H–He（Ar）系统的一般CVD图。p = 0.01–10托，T = 600–1400 K，n（N）/ n（Si）= 1-10。该图将对Si–C–N–H–He（Ar）系统的实验研究有用。