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Generalized CVD Diagram of the Si–C–N–H–Не(Ar) System

  • PHYSICOCHEMICAL ANALYSIS OF INORGANIC SYSTEMS
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Abstract

Silicon carbonitride (SiCxNy) films have useful properties and thereby wide potential for practical use. Methods for the preparation of bulk and film SiCxNy-based materials are intensively developing. Here, we consider the preparation of such films by chemical vapor deposition (CVD) using organosilicon compounds as precursors. Additional components of the input gases are NH3 and N2 as reagents and an inert gas (He or Ar). The principles of thermodynamic calculations of the CVD process occurring under quasi-equilibrium conditions are analyzed. A generalized CVD diagram for the Si–C–N–H–He(Ar) system having excessive carbon has been designed in the area of deposition parameters where p = 0.01–10 Torr, T = 600–1400 K, and n(N)/n(Si) = 1–10. This diagram will be useful in experimental studies of the Si–C–N–H–He(Ar) system.

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Notes

  1. The system is added with argon to maintain the necessary pressure.

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Funding

This work has been fulfilled in the frame of the Governmental Assignment to the Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences.

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. A. Shestakov, V. I. Kosyakov & M. L. Kosinova

Authors
  1. V. A. Shestakov
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  2. V. I. Kosyakov
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  3. M. L. Kosinova
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Correspondence to V. A. Shestakov.

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Translated by O. Fedorova

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Shestakov, V.A., Kosyakov, V.I. & Kosinova, M.L. Generalized CVD Diagram of the Si–C–N–H–Не(Ar) System. Russ. J. Inorg. Chem. 65, 898–904 (2020). https://doi.org/10.1134/S0036023620060212

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